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Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such. Buy SOLID STATE 2N online at Newark element Buy your 2N from an Technical Datasheet: 2N Datasheet. See all Technical Docs. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Motorola, TMOS SWITCHING FET TRANSISTORS.

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2N Datasheet(PDF) – Motorola, Inc

If comprehensive data for 2N to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

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Please contact sales office if device weight is not available. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.


For pricing and availability, contact Microchip Local Sales. Vds – Drain-Source Breakdown Voltage.

Only show products with samples. We completely know the crux of the components supply chain. The maximum working temperature. Dataheet have engaged in the electronic components industry over 10 years.

Application Notes Download All. Microchip 2N is available at Allchips. Vgs – gate-source voltage. Buy from the Microchip Store.

Analog Multiplexer Dual 4: Allchips offer professional product life cycle service and replacement suggestions. Id – continuous drain current.

PDF 2N6660 Datasheet ( Hoja de datos )

Sampling Options Buy Now. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Allchips offer a warranty of days for each component. Stock Limited ,if you dqtasheet to buy,please Contact Us. Allchips focusing on the end users datqsheet the intelligent BOM solution with the help of AI and big data. Welcome to your attention, too! Analog Multiplexer Single 4: Pd – Power Dissipation. All components original and new, traceable for sure.


Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

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